U.S. Department of Energy’s National Laboratory of the Rockies researchers found light- and elevated-temperature-induced degradation (LeTID) is negligible in n-type TOPCon solar cells compared to p-type PERC. Testing phosphorus, antimony and arsenic-doped n-type Czochralski wafers, they confirmed LeTID exists in n-Cz material but causes minimal recombination due to asymmetrical carrier capture.
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